IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 200 V DS • N-channel, normal level R 32 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 34 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Package PG-TO263-3 PG-TO220-3 PG-TO262-3 Marking 320N20N 320N20N 320N20N Maximum ratings, at T=25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C 34 A D C T =100 °C 22 C Pulsed drain current2) ID,pulse TC=25 °C 136 Avalanche energy, single pulse E I =34 A, R =25 Ω 190 mJ AS D GS Reverse diode dv/dt dv/dt 10 kV/µs Gate source voltage V ±20 V GS Power dissipation P T =25 °C 136 W tot C Operating and storage temperature T, T -55 ... 175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 1)J-STD20 and JESD22 2) See figure 3 Rev. 2.3 page 1 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.1 K/W thJC R minimal footprint - - 62 Thermal resistance, junction - thJA ambient 6 cm2 cooling area3) - - 40 Electrical characteristics, at T=25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 200 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90 µA 2 3 4 GS(th) DS GS D V =160 V, V =0 V, Zero gate voltage drain current I DS GS - 0.1 1 µA DSS T=25 °C j V =160 V, V =0 V, DS GS - 10 100 T=125 °C j Gate-source leakage current I V =20 V, V =0 V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10 V, I =34 A - 28 32 mΩ DS(on) GS D Gate resistance R - 2.5 - Ω G |V |>2|I |R , Transconductance g DS D DS(on)max 27 54 - S fs I =34 A D 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 1770 2350 pF iss V =0 V, V =100 V, Output capacitance C GS DS - 135 180 oss f=1 MHz Reverse transfer capacitance C - 4 - rss Turn-on delay time t - 11 - ns d(on) V =100 V, Rise time t DD - 9 - r V =10 V, I =17 A, GS D Turn-off delay time td(off) RG=1.6 Ω - 21 - Fall time t - 4 - f Gate Charge Characteristics4) Gate to source charge Q - 8 - nC gs Gate to drain charge Q - 3 - gd V =100 V, I =17 A, Switching charge Q DD D - 5 - sw V =0 to 10 V GS Gate charge total Q - 22 29 g Gate plateau voltage V - 4.4 - V plateau Output charge Q V =100 V, V =0 V - 54 72 nC oss DD GS Reverse Diode Diode continous forward current I - - 34 A S T =25 °C C Diode pulse current I - - 136 S,pulse V =0 V, I =34 A, Diode forward voltage V GS F - 0.9 1.2 V SD T=25 °C j Reverse recovery time trr V =100 V, I =17 A, - 110 - ns R F di /dt=100 A/µs Reverse recovery charge Q F - 500 - nC rr 4) See figure 16 for gate charge parameter definition Rev. 2.3 page 3 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G 1 Power dissipation 2 Drain current P =f(T ) I =f(T ); V ≥10 V tot C D C GS 160 40 140 120 30 100 W] A] P [tot 80 I [D 20 60 40 10 20 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I =f(V ); T =25 °C; D=0 Z =f(t ) D DS C thJC p parameter: t parameter: D=t /T p p 103 1 µs 102 10 µs 100 100 µs W] 0.5 A] 1 ms K/ I [D 101 [hJC 0.2 t Z 10 ms 0.1 10-1 0.05 100 0.02 DC 0.01 single pulse 10-1 10-2 10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 VDS [V] tp [s] Rev. 2.3 page 4 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I =f(V ); T=25 °C R =f(I ); T=25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 60 60 10 V 7 V 50 50 4.5 V 5 V 5 V 40 40 ] Ω m [A]D 30 [on) 30 7 V 10 V I S( D R 20 20 4.5 V 10 10 0 0 0 1 2 3 4 5 0 10 20 30 40 50 60 70 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance I =f(V ); |V |>2|I |R g =f(I ); T=25 °C D GS DS D DS(on)max fs D j parameter: T j 50 80 70 40 60 50 30 A] S] I [D g [fs 40 20 30 175 °C 20 10 10 25 °C 0 0 0 2 4 6 8 0 25 50 75 V [V] I [A] GS D Rev. 2.3 page 5 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R =f(T); I =34 A; V =10 V V =f(T); V =V DS(on) j D GS GS(th) j GS DS parameter: I D 100 4 3.5 80 900 µA 3 90 µA 2.5 ]Ω 60 m V] [ DS(on) 98% [GS(th) 2 R 40 V 1.5 typ 1 20 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(V ); V =0 V; f=1 MHz I =f(V ) DS GS F SD parameter: T j 104 103 Ciss 103 102 25 °C [pF] 102 Coss [A]F 175 °C C I 25°C, 98% 101 101 Crss 175°C, 98% 100 0 40 80 120 160 0 0.5 1 1.5 2 V [V] V [V] DS SD Rev. 2.3 page 6 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G 13 Avalanche characteristics 14 Typ. gate charge I =f(t ); R =25 Ω V =f(Q ); I =17 A pulsed AS AV GS GS gate D parameter: T parameter: V j(start) DD 100 10 8 160 V 25 °C 100 V 100 °C 6 A] V] 40 V [S 10 125 °C [S A G I V 4 2 1 0 1 10 100 1000 0 5 10 15 20 25 t [µs] Q [nC] AV gate 15 Drain-source breakdown voltage 16 Gate charge waveforms V =f(T); I =1 mA BR(DSS) j D 230 V GS Q g 220 210 V] [S) S D R( B V 200 Vgs(th) 190 Qg(th) Qsw Qgate Q Q 180 gs gd -60 -20 20 60 100 140 180 T [°C] j Rev. 2.3 page 7 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G PG-TO220-3: Outline Rev. 2.3 page 8 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G PG-TO263-3: Outline Rev. 2.3 page 9 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G PG-TO262-3: Outline Rev. 2.3 page 10 2011-05-20

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 11 2011-05-20

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